Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm

Publication Information

Title

Japanese:
English:	Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm

Author

Japanese:	角谷直哉, 高橋綱己, 大橋輝之, 小田俊理, 内田建.
English:	N. Kadotani, T. Takahashi, T. Ohashi, S. Oda, K. Uchida.

Language

English

Journal/Book name

Japanese:
English:	Journal of Applied Physics

Volume, Number, Page

Vol. 110 pp. 034502. (7 pages)

Published date

2011

Publisher

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English:

Conference name

Japanese:
English:

Conference site

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English: