Numerical simulation study of electrostatically defined silicon double quantum dot device

Publication Information

Title

Japanese:
English:	Numerical simulation study of electrostatically defined silicon double quantum dot device

Author

Japanese:	Sulthoni Muhammad Amin, 小寺哲夫, 内田建, 小田俊理.
English:	M. A. Sulthoni, T. Kodera, K. Uchida, S. Oda.

Language

English

Journal/Book name

Japanese:
English:	J. Appl. Phys.

Volume, Number, Page

Vol. 110 pp. 054511 -1-4

Published date

Aug. 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI