Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

Publication Information

Title

Japanese:
English:	Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

Author

Japanese:	大橋輝之, 高橋綱己, 小寺哲夫, 小田俊理, 内田建.
English:	T. Ohashi, T. Takahashi, T. Kodera, S. Oda, K. Uchida.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 25, 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2012 International Conference on Solid State Devices and Materials (SSDM 2012)

Conference site

Japanese:
English:	Kyoto