(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	(100)-and (110)-oriented nMOSFETs with highly Scaled EOT in La-silicate/Si Interface for Multi-gate Architecture

Author

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	ESSDERC 2012

Conference site

Japanese:
English:	Bordeaux

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