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Publication Information
Title
Japanese:
English:
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown
Author
Japanese:
E. Mranda
,
川那子高暢
,
角嶋邦之
,
J. Sune
,
岩井洋
.
English:
E. Mranda
,
Takamasa Kawanago
,
Kuniyuki KAKUSHIMA
,
J. Sune
,
HIROSHI IWAI
.
Language
English
Journal/Book name
Japanese:
English:
[588] E. Miranda, T. Kawanago, K. Kakushima, J. Sune, H. Iwai, “Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown”, ESREF2012, October, 2012, Cagliari, Italy
Volume, Number, Page
Published date
2012
Publisher
Japanese:
English:
Conference name
Japanese:
English:
ESREF2012
Conference site
Japanese:
English:
Cagliari
©2007
Tokyo Institute of Technology All rights reserved.