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Publication Information
Title
Japanese:
English:
Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator
Author
Japanese:
Pham Van Thanh, Bui Nguyen Quoc Trinh,
宮迫 毅明
, Phan Trong Tue,
徳光 永輔
,
下田 達也
.
English:
Pham Van Thanh, Bui Nguyen Quoc Trinh,
Takaaki Miyasako
, Phan Trong Tue,
Eisuke Tokumitsu
,
Tatsuya Shimoda
.
Language
English
Journal/Book name
Japanese:
English:
JPN. J. APPL. PHYS.
Volume, Number, Page
Vol. 51 pp. 09LA09-1-5
Published date
Sept. 2012
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
©2007
Tokyo Institute of Technology All rights reserved.