La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode

Author

Language

English

Journal/Book name

Japanese:
English:	Solid-State Electronics

Volume, Number, Page

Vol. 82 pp. 29-33

Published date

Apr. 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI

https://doi.org/10.1016/j.sse.2013.01.013

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