Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching

Publication Information

Title

Japanese:
English:	Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching

Author

Japanese:	C.-H. Yu, H.-T. Hsu, C.-Y. Chiang, C.-I Kuo, 宮本恭幸, E. Y. Chang.
English:	C.-H. Yu, H.-T. Hsu, C.-Y. Chiang, C.-I Kuo, Y. Miyamoto, E. Y. Chang.

Language

English

Journal/Book name

Japanese:
English:	JPN. J. APPL. PHYS.

Volume, Number, Page

vol. 52 no. 2

Published date

2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: