InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

Publication Information

Title

Japanese:
English:	InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

Author

Japanese:	E. Y. Chang, C.-I Kuo, H.-T. Hsu, C.-Y. Chiang, 宮本恭幸.
English:	E. Y. Chang, C.-I Kuo, H.-T. Hsu, C.-Y. Chiang, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Appl. Phys. Exp.

Volume, Number, Page

vol. 6 no. 3

Published date

2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI