71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure

Publication Information

Title

Japanese:
English:	71 mV/dec of Sub-Threshold Slope in Vertical Tunnel Field-Effect Transistors with GaAsSb/InGaAs Heterostructure

Author

Japanese:	藤松基彦, 齋藤尚史, 宮本恭幸.
English:	M. Fujimatsu, H. Saito, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Aug. 27, 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	24th Int. Conf. Indium Phosphide and Related Materials (IPRM2012)

Conference site

Japanese:
English:	Santa Barbara, CA