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Publication Information
Title
Japanese:
n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性
English:
Author
Japanese:
佐賀井 健
,
上原 英治
,
大澤 一斗
,
宮本 恭幸
.
English:
Takeru Sagai
,
Eiji Uehara
,
Kazuto Ohsawa
,
YASUYUKI MIYAMOTO
.
Language
Japanese
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Mar. 21, 2013
Publisher
Japanese:
English:
Conference name
Japanese:
2013年電子情報通信学会総合大会
English:
Conference site
Japanese:
岐阜市
English:
©2007
Tokyo Institute of Technology All rights reserved.