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Title
Japanese:n-InP ソースを持つT ゲート構造 InGaAs-MOSFET の高周波特性 
English: 
Author
Japanese: 佐賀井 健, 上原 英治, 大澤 一斗, 宮本 恭幸.  
English: Takeru Sagai, Eiji Uehara, Kazuto Ohsawa, YASUYUKI MIYAMOTO.  
Language Japanese 
Journal/Book name
Japanese: 
English: 
Volume, Number, Page        
Published date Mar. 21, 2013 
Publisher
Japanese: 
English: 
Conference name
Japanese:2013年電子情報通信学会総合大会 
English: 
Conference site
Japanese:岐阜市 
English: 

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