Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT

Publication Information

Title

Japanese:
English:	Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT

Author

Japanese:	川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋.
English:	Takamasa Kawanago, Kuniyuki KAKUSHIMA, 片岡好則, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, KAZUO TSUTSUI, Kenji Natori, HIROSHI IWAI.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:	ESSDERC 2013

Conference site

Japanese:
English:	Bucharest