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Title
Japanese: 
English:Silicon-Nitride-Passivated Bottom-Up Single-Electron Transistors 
Author
Japanese: Hackenberger Guillaume, 東 康男, 加納 伸也, 田中 大介, 坂本 雅典, 寺西 利治, 大野 恭秀, 前橋 兼三, 松本 和彦, 真島 豊.  
English: Guillaume Hackenberger, Yasuo Azuma, Shinya Kano, Daisuke Tanaka, Masanori Sakamoto, Toshiharu Teranishi, Yasuhide Ohno, Kenzo Maehashi, Kazuhiko Matsumoto, Yutaka Majima.  
Language English 
Journal/Book name
Japanese: 
English:Jpn. J. Appl. Phys. 
Volume, Number, Page Vol. 52        10101-1-5
Published date Oct. 21, 2013 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL http://iopscience.iop.org/1347-4065/52/11R/110101/
 
DOI https://doi.org/10.7567/JJAP.52.110101

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