Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Publication Information

Title

Japanese:
English:	Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation

Author

Japanese:	長谷川淳一, K.Konishi, Y.Nakamura, K.Otsuka, 中峯嘉文, 西村正, 波多野睦子.
English:	J. Hasegawa, K.Konishi, Y.Nakamura, K.Otsuka, Y.Nakamine, T.Nishimura, M.Hatano.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 2, 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:	ICSCRM2013

Conference site

Japanese:
English:	Miyazaki