テラス幅を制御したSi(111)1゜off 基板上へのCaF<sub>2</sub>イオンビームエピタキシャル成長

Publication Information

Title

Japanese:	テラス幅を制御したSi(111)1゜off 基板上へのCaF₂イオンビームエピタキシャル成長
English:	Ion beam epitaxial growth of CaF₂ on Si(111) 1degree substrate with controlled terrace-width

Author

Japanese:	池谷吉史, 渡辺正裕, 浅田雅洋.
English:	Y. Iketani, M. Watanabe, M. Asada.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

1p-T-4 1 342

Published date

Sept. 1, 1999

Publisher

Japanese:
English:

Conference name

Japanese:	第60回応用物理学会学術講演会
English:	The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys

Conference site

Japanese:	神戸
English:	Kobe