Home >

news Help

Publication Information


Title
Japanese: 
English:Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition 
Author
Japanese: 大島 孝仁, 丹羽 三冬, 向井 章, 長見 知史, 須山 敏尚, 大友 明.  
English: T. Oshima, M. Niwa, A. Mukai, T. Nagami, T. Suyama, A. Ohtomo.  
Language English 
Journal/Book name
Japanese: 
English:Journal of Crystal Growth 
Volume, Number, Page Volume 386        Page 190-193
Published date Jan. 15, 2014 
Publisher
Japanese: 
English:Elsevier 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL http://www.sciencedirect.com/science/article/pii/S002202481300674X
 
DOI https://doi.org/10.1016/j.jcrysgro.2013.10.012
Abstract ZnGa2O4 films were grown on (100) MgAl2O4 substrates by mist chemical vapor deposition. A growth window for obtaining single spinel phase was revealed by systematic variations of precursor Zn/Ga ratio and growth temperature, where the cation stoichiometry was maintained through sublimation of excess Zn species before crystalized into ZnO. The epitaxial relationship to the substrate was identified to be cube on cube with no rotation domain. The optical properties of the fully relaxed film were characterized by using cathodoluminescence (CL) and absorption spectroscopies. A large Stokes shift was found between the CL peak energy (3.4 eV) and fundamental absorption edge (4.6 eV), reflecting typical property of Ga-based wide-band-gap oxide semiconductors.

©2007 Tokyo Institute of Technology All rights reserved.