CoSi<sub>2</sub> 上弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の作製と特性評価

Publication Information

Title

Japanese:	CoSi₂ 上弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の作製と特性評価
English:	Fabrication and characterization of resistance switching devices using fluoride based resonant tunneling structures grown on CoSi₂/Si(111)

Author

Japanese:	仲正路友康, 瓜生和也, 渡辺正裕.
English:	Y. Nakashouji, K. Uryu, M. Watanabe.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

26a-KV-6 14-070

Published date

Mar. 26, 2011

Publisher

Japanese:
English:

Conference name

Japanese:	第58回応用物理学会関係連合講演会
English:	The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies

Conference site

Japanese:	神奈川県
English:	Kanagawa