CaF<sub>2</sub>/CdF<sub>2</sub>/Si ヘテロ接合量子井戸構造を用いた抵抗スイッチング素子の保持特性評価

Publication Information

Title

Japanese:	CaF₂/CdF₂/Si ヘテロ接合量子井戸構造を用いた抵抗スイッチング素子の保持特性評価
English:	Retention characteristics of resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on Si(111)

Author

Japanese:	瓜生和也, 渡辺正裕.
English:	K. Uryu, M. Watanabe.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

31p-P16-14 14-045

Published date

Aug. 31, 2011

Publisher

Japanese:
English:

Conference name

Japanese:	第72回応用物理学会学術講演会
English:	The 72nd Autumn Meeting of The Jpn. Soc. of Appl. Phys

Conference site

Japanese:	山形県
English:	Yamagata