Resistance switching memory using Si/CaF<sub>2</sub>/CdF<sub>2</sub> quantum-well structures

Publication Information

Title

Japanese:
English:	Resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures

Author

Japanese:	渡辺正裕, R. Hirasawa, Y. Nakashouji.
English:	M. Watanabe, R. Hirasawa, Y. Nakashouji.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

K-2-6 284-285

Published date

Oct. 2009

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The 2009 International Conference on Solid State Devices and Materials

Conference site

Japanese:
English:	Sendai, Japan