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Title
Japanese: 
English:Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors 
Author
Japanese: 水野 洋輔, 大矢 忍, ファム ナム ハイ, 田中 雅明.  
English: Yosuke Mizuno, Shinobu Ohya, Pham Nam Hai, Masaaki Tanaka.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 90    No. 16    p. 162505
Published date Apr. 2007 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.1063/1.2724771
Abstract The authors have investigated the spin-dependent transport properties of GaMnAs-based “three-terminal” semiconductor spin hot-carrier transistor (SSHCT) structures. The emitter-base bias voltage VEB dependence of the collector current IC, emitter current IE, and base current IB shows that the current transfer ratio α ( = IC/IE) and the current gain β ( = IC/IB) are 0.8–0.95 and 1–10, respectively, which means that GaMnAs-based SSHCTs have current amplification capability. In addition, the authors observed an oscillatory behavior of the tunneling magnetoresistance ratio with the increasing bias, which can be explained by the resonant tunneling effect in the GaMnAs quantum well.

©2007 Tokyo Institute of Technology All rights reserved.