Tunneling magnetoresistance in GaMnAs / AlAs / InGaAs / AlAs / GaMnAs double- barrier magnetic tunnel junctions

Publication Information

Title

Japanese:
English:	Tunneling magnetoresistance in GaMnAs / AlAs / InGaAs / AlAs / GaMnAs double- barrier magnetic tunnel junctions

Author

Japanese:	大矢忍, ファムナムハイ, 田中雅明.
English:	S. Ohya, P. N. Hai, M. Tanaka.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

June 11, 2004

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Workshop on Physics and Applications of Spin-related Phenomena in Semiconductors

Conference site

Japanese:
English:	Tokyo