Improved threshold voltage instability in organic field-effect transistors formed with SiO2 gate dielectrics thermally annealed at high temperatures

Publication Information

Title

Japanese:
English:	Improved threshold voltage instability in organic field-effect transistors formed with SiO2 gate dielectrics thermally annealed at high temperatures

Author

Japanese:	國井正文, 飯野裕明, 半那純一.
English:	Masafumi Kunii, Hiroaki Iino, Jun-ichi Hanna.

Language

English

Journal/Book name

Japanese:
English:	Abstract of 2nd International Symposium on Self-Organizing Molecular Semiconductors

Volume, Number, Page

Published date

Feb. 27, 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2nd International Symposium on Self-Organizing Molecular Semiconductors

Conference site

Japanese:	東京都目黒区大岡山
English:	Ookayama, Meguro-ku, Tokyo