Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors

Publication Information

Title

Japanese:
English:	Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors

Author

Japanese:	Tue T. Phan, Trinh Q. Bui Nguyen, 宮迫毅明, Thanh V. Pham, 徳光永輔, 下田達也.
English:	Tue T. Phan, Trinh Q. Bui Nguyen, Takaaki Miyasako, Thanh V. Pham, Eisuke Tokumitsu, Tatsuya Shimoda.

Language

English

Journal/Book name

Japanese:
English:	2011 Spring meeting, Materials Research Society Symp. Proc.

Volume, Number, Page

1337

Published date

Aug. 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2011 Spring meeting, Materials Research Society Symp.

Conference site

Japanese:
English:	San Francisco

DOI