600 V Diamond Junction Field-Effect Transistors Operated at 200 °C

Publication Information

Title

Japanese:
English:	600 V Diamond Junction Field-Effect Transistors Operated at 200 °C

Author

Japanese:	岩崎孝之, 矢板潤也, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Hideyo Okushi, Satoshi Yamasaki, 波多野睦子.
English:	Takayuki Iwasaki, Junya Yaita, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Hideyo Okushi, Satoshi Yamasaki, Mutsuko Hatano.

Language

English

Journal/Book name

Japanese:
English:	IEEE Electron Device Lett.

Volume, Number, Page

Vol. 35 pp. 241-243

Published date

2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI