Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT

Publication Information

Title

Japanese:
English:	Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT

Author

Japanese:	山口裕太郎, K. Hayashi, T. Oishi, H. Otsuka, K. Yamanaka, 宮本恭幸.
English:	Y. Yamaguchi, K. Hayashi, T. Oishi, H. Otsuka, K. Yamanaka, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 27, 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2013 International Conference on Solid State Devices and Materials (SSDM)

Conference site

Japanese:
English:	Fukuoka