Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

Publication Information

Title

Japanese:
English:	Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope

Author

Japanese:	柏野壮志, 行待篤志, 宮本恭幸.
English:	M. Kashiwano, A. Yukimachi, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 27, 2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2013 International Conference on Solid State Devices and Materials (SSDM)

Conference site

Japanese:
English:	Fukuoka