(Invited) Growth Process for High Performance of InGaAs MOSFETs

Publication Information

Title

Japanese:
English:	(Invited) Growth Process for High Performance of InGaAs MOSFETs

Author

Japanese:	宮本恭幸, 金澤徹, 米内義晴, 大澤一斗, 三嶋裕一, T. Irisawa, M. Oda, T. Tezuka.
English:	Y. Miyamoto, T. Kanazawa, Y. Yonai, K. Ohsawa, Y. Mishima, T. Irisawa, M. Oda, T. Tezuka.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

June 24, 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	72nd Device Research Conference (DRC)

Conference site

Japanese:
English:	Santa Barbara, CA