Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs

Publication Information

Title

Japanese:
English:	Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs

Author

Japanese:	大橋一水, 藤松基彦, 宮本恭幸.
English:	K. Ohashi, M. Fujimatsu, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 11, 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2014 International Conference on Solid State Devices and Materials (SSDM)

Conference site

Japanese:
English:	Tsukuba