Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs

Publication Information

Title

Japanese:
English:	Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs

Author

Japanese:	大橋一水, 藤松基彦, 岩田真次郎, 宮本恭幸.
English:	K. Ohashi, M. Fujimatsu, S. Iwata, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl.Phys.

Volume, Number, Page

Vol. 54 Number 4S

Published date

Apr. 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI