低電圧/高速動作にむけたInGaAs MOSFETソース構造

Publication Information

Title

Japanese:	低電圧/高速動作にむけたInGaAs MOSFETソース構造
English:

Author

Japanese:	宮本恭幸, 金澤徹, 米内義晴, 加藤淳, 藤松基彦, 柏野壮志, 大澤一斗, 大橋一水.
English:	YASUYUKI MIYAMOTO, Toru Kanazawa, Yosiharu Yonai, atsushi kato, Motohiko Fujimatsu, Masashi Kashiwano, Kazuto Ohsawa, Kazumi Ohashi.

Language

Japanese

Journal/Book name

Japanese:
English:	IEICE Technical Report

Volume, Number, Page

Published date

Aug. 1, 2014

Publisher

Japanese:
English:

Conference name

Japanese:	電子情報通信学会電子デバイス研究会
English:

Conference site

Japanese:	東京
English: