Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS

Publication Information

Title

Japanese:
English:	Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS

Author

Japanese:	長谷川淳一, 小寺哲夫, 岩崎孝之, 波多野睦子.
English:	J. Hasegawa, T. Kodera, T. Iwasaki, M. Hatano.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Dec. 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The Third International Education Forum on Environment and Energy Science

Conference site

Japanese:
English:	Perth