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Title
Japanese:IGBT 物理モデルの負荷短絡保護回路への適用 
English:An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions 
Author
Japanese: 岡本昌二, 堀口剛司, 冨永真志, 西村正, 藤田英明, 赤木泰文, 木ノ内伸一, 大井健史.  
English: Shoji Okamoto, Takeshi Horiguchi, Shinji Tominaga, Tadashi Nishimura, Hideaki Fujita, Hirofumi Akagi, 木ノ内伸一, 大井健史.  
Language Japanese 
Journal/Book name
Japanese:電気学会論文誌D 
English:IEEJ Trans. IA 
Volume, Number, Page vol. 134    no. 10    pp. 853-862
Published date Oct. 1, 2014 
Publisher
Japanese:電気学会 
English:Institute of Electrical Engineering in Japan 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
DOI https://doi.org/10.1541/ieejias.134.853
Abstract This paper presents a protection circuit for a fault under load (FUL). The protection circuit is characterized by the reverse transfer capacitance characteristic of IGBTs. The reverse transfer capacitance depends on the collector-emitter voltage and has a significant influence on the switching behavior under short-circuit conditions and normal conditions. An FUL is detected by monitoring a gate current because the current flows through the reverse transfer capacitance of IGBTs from the collector terminal to the gate terminal under FUL conditions. A physics-based IGBT model shows high accuracy for both static and dynamic characteristics, making it useful for developing a protection circuit for IGBTs subjected to short-circuit conditions. Simulated results using the physics-based IGBT model and experimental results verify the validity of the proposed protection circuit.

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