Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture

Publication Information

Title

Japanese:
English:	Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture

Author

Japanese:	周藤悠介, 山本修一郎, 菅原聡.
English:	Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference 2014)

Conference site

Japanese:
English:	Millbrae, CA