Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Publication Information

Title

Japanese:	Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
English:	Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Author

Japanese:	Takuya Hoshii, Satoshi Sugahara, Shin-ichi Takagi.
English:	Takuya Hoshii, Satoshi Sugahara, Shin-ichi Takagi.

Language

English

Journal/Book name

Japanese:	Japanese Journal of Applied Physics
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 46 No. 4B pp. 2122-2126

Published date

Apr. 24, 2007

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI