Fabrication and characterization of gate-defined small Si-MOS quantum dot devices

Publication Information

Title

Japanese:
English:	Fabrication and characterization of gate-defined small Si-MOS quantum dot devices

Author

Japanese:	J. Yoneda, 本田拓夢, 武田健太, M. Marx, T. Otsuka, T.Nakajima, M. R. Delbecq, S. Amaha, G. Allison, 小寺哲夫, 小田俊理, 樽茶清悟.
English:	J. Yoneda, T. Honda, K. Takeda, M. Marx, T. Otsuka, T.Nakajima, M. R. Delbecq, S. Amaha, G. Allison, T. Kodera, S. Oda, S. Tarucha.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Aug. 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Silicon Quantum Electronics Workshop 2015

Conference site

Japanese:
English:	Takamatsu