Fabrication of a highly controllable Si-MOS quantum dot device

Publication Information

Title

Japanese:
English:	Fabrication of a highly controllable Si-MOS quantum dot device

Author

Japanese:	本田拓夢, J. Yoneda, 武田健太, 小寺哲夫, 樽茶清悟, 小田俊理.
English:	T. Honda, J. Yoneda, K. Takeda, T. Kodera, S. Tarucha, S. Oda.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

June 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:	IEEE 2015 Silicon Nanoelectronics Workshop

Conference site

Japanese:
English:	Kyoto