Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films

Publication Information

Title

Japanese:
English:	Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films

Author

Japanese:	R. Matsubara, Y. Sakai, T. Nomura, M. Sakai, K. Kudo, 真島豊, D. Knipp, M. Nakamura.
English:	R. Matsubara, Y. Sakai, T. Nomura, M. Sakai, K. Kudo, Y. Majima, D. Knipp, M. Nakamura.

Language

English

Journal/Book name

Japanese:
English:	Journal of Applied Physics

Volume, Number, Page

118 17 175502(9)

Published date

Nov. 7, 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI