Steep slope devices with InGaAs channel for post Si CMOS application | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Steep slope devices with InGaAs channel for post Si CMOS application

Author

Japanese:	宮本恭幸.
English:	Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Mar. 13, 2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:	China Semiconductor Technology International Conference (CSTIC) 2016

Conference site

Japanese:
English:	Shanghai

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