Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing

Publication Information

Title

Japanese:
English:	Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing

Author

Japanese:	祢津誠晃, 金澤徹, 宮本恭幸.
English:	S. Netsu, T. Kanazawa, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

July 1, 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:	27th International Conference on Indium Phosphide and Related Materials

Conference site

Japanese:
English:	Santa Barbara, California