Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Publication Information

Title

Japanese:
English:	Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Author

Japanese:	牧山剛三, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, Y. Niida, Y. Kamada, K. Joshin, K. Watanabe, 宮本恭幸.
English:	K. Makiyama, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, Y. Niida, Y. Kamada, K. Joshin, K. Watanabe, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Dec. 7, 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2015 IEEE International Electron Devices Meeting (IEDM)

Conference site

Japanese:
English:	Washington DC