Changes of chemical structure of hydrogenated amorphous silicon carbide films with the application of radio-frequency bias voltages during chemical vapor deposition

Publication Information

Title

Japanese:	Changes of chemical structure of hydrogenated amorphous silicon carbide films with the application of radio-frequency bias voltages during chemical vapor deposition
English:	Changes of chemical structure of hydrogenated amorphous silicon carbide films with the application of radio-frequency bias voltages during chemical vapor deposition

Author

Japanese:	Haruhiko Ito, Takeshi Ogaki, Motoki Kumakura, Shunsuke Saeki, Tsuneo Suzuki, Hiroki Akasaka, Hidetoshi Saitoh.
English:	Haruhiko Ito, Takeshi Ogaki, Motoki Kumakura, Shunsuke Saeki, Tsuneo Suzuki, Hiroki Akasaka, Hidetoshi Saitoh.

Language

English

Journal/Book name

Japanese:	Diamond and Related Materials
English:	Diamond and Related Materials

Volume, Number, Page

Vol. 66 pp. 1-9

Published date

Mar. 10, 2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI