Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain

Publication Information

Title

Japanese:
English:	Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain

Author

Japanese:	木下治紀, 祢津誠晃, 三嶋裕一, 金澤徹, 宮本恭幸.
English:	H.Kinoshita, S.Netsu, Y.mishima, T.Kanazawa, Y.Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Aug. 24, 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:	11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)

Conference site

Japanese:
English:	Takayama