Steep subthreshold slope in InGaAs MOSFET | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Steep subthreshold slope in InGaAs MOSFET

Author

Japanese:	宮本恭幸, M. Fujimatsu, K. Ohashi, 行待篤志, 岩田真次郎.
English:	Y. Miyamoto, M. Fujimatsu, K. Ohashi, A. Yukimachi, S. Iwata.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 7, 2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:	SemiconNano2015

Conference site

Japanese:
English:	Hsinchu

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