Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain

Publication Information

Title

Japanese:
English:	Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain

Author

Japanese:	木下治紀, 木瀬信和, 行待篤志, 金澤徹, 宮本恭幸.
English:	Haruki Kinoshita, Nobukazu Kise, Atsushi Yukimachi, Toru Kanazawa, Yasuyuki Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

TuD4-2

Published date

June 28, 2016

Publisher

Japanese:
English:

Conference name

Japanese:	Compound Semiconductor Week (CSW2016)
English:

Conference site

Japanese:
English:	Toyama