Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors

Publication Information

Title

Japanese:
English:	Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors

Author

Japanese:	井手啓介, 菊池満帆, 太田雅人, 笹瀬雅人, 平松秀典, 雲見日出也, 細野秀雄, 神谷利夫.
English:	Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

Vol. 56 pp. 03BB03-1 - 5

Published date

Jan. 11, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI