Lasing Characteristics of  1.3-µm npn-AlGaInAs/InP Transistor Laser with Reduced Base Bandgap Structure

Publication Information

Title

Japanese:
English:	Lasing Characteristics of 1.3-µm npn-AlGaInAs/InP Transistor Laser with Reduced Base Bandgap Structure

Author

Japanese:	吉冨翔一, 只野翔太郎, 山中健太郎, 西山伸彦, 荒井滋久.
English:	Shoichi Yoshitomi, Shotaro Tadano, Kentarou Yamanaka, Nobuhiko Nishiyama, SHIGEHISA ARAI.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

No. 1-3G-5

Published date

July 31, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:	The 12th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2017)

Conference site

Japanese:
English: