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Title
Japanese:3D/2.5D-IC TSVに向けた低温成膜SiNxの特性評価 
English: 
Author
Japanese: 小林 靖志, 中田 義弘, 中村 友二, 武山 眞弓, 佐藤 勝, 野矢 厚.  
English: 小林 靖志, 中田 義弘, Tomoji Nakamura, 武山 眞弓, 佐藤 勝, 野矢 厚.  
Language Japanese 
Journal/Book name
Japanese:電気学会論文誌. C 
English: 
Volume, Number, Page Vol. 135    No. 7    pp. 733-738
Published date July 2015 
Publisher
Japanese:The Institute of Electrical Engineers of Japan 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Abstract For realizing highly reliable Cu wiring in 3D/2.5D-IC, SiNx films formed by the reactive sputtering deposition and the plasma-enhanced chemical vapor deposition (PECVD) at low substrate temperatures are characterized and compared by use of X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FT-IR). The film density obtained by XRR shows clear difference between the sputtering and PECVD films. Si-H bonding concentrations obtained by analyzing FT-IR spectra show good correlations with the film densities independent of deposition methods and conditions. Lower density properties of PECVD films could be attributed to higher density of residual Si-H bonds in the films.

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