InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope

Author

Japanese:	行待篤志, 宮本恭幸.
English:	A. Yukimachi, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

vol. 55 118004

Published date

Oct. 17, 2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI

https://doi.org/10.7567/JJAP.55.118004

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