Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks

Publication Information

Title

Japanese:
English:	Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks

Author

Japanese:	大澤一斗, 祢津誠晃, 木瀬信和, 野口真司, 宮本恭幸.
English:	K. Ohsawa, S. Netsu, N. Kise, S. Noguchi, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys.

Volume, Number, Page

vol. 56 no. 4S 04CG05 2017

Published date

Mar. 9, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: