High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)

Publication Information

Title

Japanese:
English:	High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)

Author

Japanese:	牧山剛三, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, Y. Niida, Y. Kamada, M. Sato, K. Joshin, K. Watanabe, 宮本恭幸.
English:	K. Makiyama, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, Y. Niida, Y. Kamada, M. Sato, K. Joshin, K. Watanabe, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Aug. 23, 2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:	URSI AP-RASC 2016

Conference site

Japanese:
English:	Seoul